| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS P-CHANNEL -50Volt,0.20OhmHEXFET | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
VacuumFluorescentDisplayFilamentDriver | NSCNational Semiconductor (TI) 美國國家半導體美國國家半導體公司 | NSC |
產(chǎn)品屬性
- 產(chǎn)品編號：
EPC9022
- 制造商：
EPC
- 類別：
開發(fā)板，套件，編程器 > 評估和演示板及套件
- 系列：
eGaN?
- 包裝：
散裝
- 類型：
電源管理
- 功能：
半 H 橋驅動器（外部 FET）
- 嵌入式：
無
- 使用的 IC/零件：
EPC8002
- 所含物品：
板
- 描述：
BOARD DEV FOR EPC8002 65V EGAN
相關規(guī)格書
更多- EPC9024
- EPC9029
- EPC9031
- EPC9033
- EPC9035
- EPC9039
- EPC9044
- EPC9101
- EPC9106
- EPC9111
- EPC9115
- EPC9201
- EPC9507
- EPCAFL4U
- EPCDTTU
- EPCKT4U
- EPCMB4
- EPCMC2-2
- EPCQ128SI16N
- EPCQ256SI16N
- EPCQ64SI16N
- EPCQL512F24IN
- EPCS16SI8N
- EPCS1SI8N
- EPCS2PC1
- EPCS4SI8N
- EPCSC2.5T
- EPCSC2.5T2-2
- EPCSC4T1-2
- EPCSFL4U
- EPCSTSN5U
- EPCTL2.5U-H
- EPD-914
- EPD-914116
- EPD-91466
- EPDP1
- EPDR1
- EPE.00.250.NTN
- EPF10K100ABC356-3
- EPF10K100ARC240-1
- EPF10K100EFC484-3
- EPF10K10AQC208-3
- EPF10K10ATI144-3N
- EPF10K10LC84-4
- EPF10K10QC208-3N
相關庫存
更多- EPC9025
- EPC9030
- EPC9032
- EPC9034
- EPC9038
- EPC9042
- EPC9046
- EPC9102
- EPC9107
- EPC9112
- EPC9118
- EPC9506
- EPC9508
- EPCDLG2.5
- EPCGT4U/Y
- EPCM250
- EPCMC1-2
- EPCMT4
- EPCQ16SI8N
- EPCQ32SI8N
- EPCQL1024F24IN
- EPCS128SI16N
- EPCS1SI8
- EPCS250
- EPCS4SI8
- EPCS64SI16N
- EPCSC2.5T1-2
- EPCSC4T
- EPCSC6T
- EPCSFL6U
- EPCTL2.5U
- EPD52963A
- EPD-914110
- EPD-91461
- EPDDFL4U
- EPDP2
- EPDR2
- EPE.00.250.NTNZ
- EPF10K100ABI356-3
- EPF10K100ARI240-3N
- EPF10K100EQC240-3
- EPF10K10ATC144-3
- EPF10K10LC84-3
- EPF10K10LC84-4N
- EPF10K10QC208-4
