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ISF1266

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISF1266

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISF1266

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISF1266

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KTA1266

PNPPlasticEncapsulatedTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

KTA1266

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features ExcellenthFElinearity,lownoise,complementarypairwithKTC3198. Applications Generalpurposeandswitchingapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

KTA1266

EPITAXIALPLANARPNPTRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KTA1266

PNPPlasticEncapsulatedTransistor

FEATURE ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

KTA1266

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

KTA1266

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ?ExcellenthFELinearity :hFE(2)=80(Typ.)atVCE=-6V,IC=-150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ?LowNoise:NF=1dB(Typ.).atf=1kHz. ?ComplementarytoKTC3198.

KECKEC CORPORATION

KEC株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    ENA1266

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications

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rf-bay
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23+
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5000
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SIS
22+
BGA
2000
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SIS
23+
BGA
33888
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SC-88A
17585
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23+
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50000
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傳感器
396
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更多ENA1266供應(yīng)商 更新時(shí)間2025-4-1 10:45:00

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