零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PNPSiliconPowerSwitchingTransistor Features ●2Wpowerdissipation. ●6Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto6Amps. ●ExtremelylowsaturationvoltageE.g.16mvTyp. ●Extremelylowequivalenton-resistance.RCE(sat)96mΩat2.5A. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR Features ?BVCEO=-20V ?IC=-2.5AContinuousCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *2WPOWERDISSIPATION *6APeakPulseCurrent *ExcellentHFECharacteristicsupto6Amps *ExtremelyLowSaturationVoltageE.g.16mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)96m?at2.5A | Zetex Zetex Semiconductors | Zetex | ||
SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR Features ?BVCEO=-20V ?IC=-2.5AContinuousCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SILICONPOWER(SWITCHING)TRANSISTORS FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | Zetex Zetex Semiconductors | Zetex | ||
SwitchingTransistor Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features ?BVCEO>-12V ?IC=-2.5AContinuousCollectorCurrent ?ICM=-10APeakPulseCurrent ?LowSaturationVoltageE.g.-17mVMax@IC=-100mA. ?RCE(sat)=72m?at2.5Aforalowequivalenton-resistance ?625mWpowerdissipation ?hFEcharacterisedupto-10Aforhighcurrentgai | DIODES Diodes Incorporated | DIODES | ||
PNPSiliconPlanarHighPerformanceTransistor Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?ExtremelyLowSaturationVoltage ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Marking:718 | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPTransistor Features ●ForSwitchingandAmplifierApplications. ●ExtremelyLowSaturationVoltage ●ComplementarytoNPNType:FMMT618 | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導體東莞市平晶半導體科技有限公司 | PJSEMI | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTOR FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | DIODES Diodes Incorporated | DIODES | ||
MediumPowerTransistor Features ●Verylowequivalenton-resistance;RCE(sat)=210mùat1.5A. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR FEATURES Verylowequivalenton-resistance;RCE(sat)=210m?at1.5A | Zetex Zetex Semiconductors | Zetex | ||
SOT23PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR FeaturesandBenefits ?BVCEO>-20V ?IC=-1AContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
20VPNPSILICONLOWSATURATIONTRANSISTORINSOT23 | DIODES Diodes Incorporated | DIODES | ||
TRIPLEDIFFUSEDNPNTRANSISTOR FEATURES ●Recommendedfor45~50WAudioFrequency AmplifierOutputStage. APPLICATIONS ●HighPowerAmplifier | FS First Silicon Co., Ltd | FS | ||
DualRemoteResistor-ProgrammableTemperatureSwitches | GMTGlobal Mixed-mode Technology Inc 致新科技 | GMT |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
通用型 (Uni)
- 封裝形式:
直插封裝
- 極限工作電壓:
60V
- 最大電流允許值:
0.5A
- 最大工作頻率:
300MHZ
- 引腳數(shù):
3
- 可代換的型號:
- 最大耗散功率:
0.4W
- 放大倍數(shù):
β>40
- 圖片代號:
C-62
- vtest:
60
- htest:
300000000
- atest:
0.5
- wtest:
0.4
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ENTROPIC |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ENTROPIC |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ENTROPIC |
23+ |
BGA |
11831 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ENTROPIC |
14+ |
BGA |
11831 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ENTROP |
23+ |
NA/ |
11831 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ENTROPIC |
23+ |
BGA |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
EON |
22+ |
BGA |
102 |
原廠原裝,價格優(yōu)勢!13246658303 |
詢價 | ||
EON |
23+ |
BGA |
34037 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術 |
詢價 | ||
EON |
2023+ |
FBGA48 |
6895 |
原廠全新正品旗艦店優(yōu)勢現(xiàn)貨 |
詢價 | ||
CFEON |
22+ |
BGA |
3255 |
強勢庫存!原裝現(xiàn)貨! |
詢價 |
相關規(guī)格書
更多- EN722
- EN870
- EN914
- EN916
- EN930
- ERS100
- ERS140
- ERS180
- ERS225
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- ERS375
- ERS425
- ERS475
- ESE3005
- ESE3007
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- ESM132
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- ESM13A
- ESM140
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- ESM188M/450...750
- ESM191
- ESM2012DV
- ESM2030DV
- ESM2060T
- ESM213
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- ESM22-100...600(N)
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- ESM114
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- ESM12B
- ESM133
- ESM135
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- ESM139
- ESM13B
- ESM141
- ESM1503
- ESM16
- ESM161
- ESM16A
- ESM18
- ESM189M/450...750
- ESM2012DF
- ESM2030DF
- ESM2040D
- ESM2070D
- ESM214
- ESM218
- ESM228M/450...750
- ESM2369
- ESM259
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- ESM2808
- ESM282A
- ESM2894
- ESM3001