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EN25B10-50VC中文資料EON數(shù)據(jù)手冊PDF規(guī)格書
EN25B10-50VC規(guī)格書詳情
GENERAL DESCRIPTION
The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
FEATURES
? Single power supply operation
- Full voltage range: 2.7-3.6 volt
? 1 M-bit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
? High performance
- 75MHz clock rate
? Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
? Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,three 32-Kbyte sectors
? Software and Hardware Write Protection:
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
? High performance program/erase speed
- Byte program time: 7μs typical
- Page program time: 1.5ms typical
- Sector erase time: 300 to 500ms typical
- Chip erase time: 2 Seconds typical
? Minimum 100K endurance cycle
? Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN
? Commercial and industrial temperature Range
產(chǎn)品屬性
- 型號：
EN25B10-50VC
- 制造商：
EON
- 制造商全稱：
Eon Silicon Solution Inc.
- 功能描述：
1 Mbit Serial Flash Memory with Boot and Parameter Sectors
