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EMH2308-TL-H

P-ChannelPowerMOSFET

Features ?TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting ?1.8Vdrive ?Halogenfreecompliance ?Protectiondiodein

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

EMS2308

MACHINEPINSOCKET

ECE

EXCEL CELL ELECTRONIC CO., LTD.

FMEN-2308

SiliconSchottkyBarrierDiode

Scope ThepresentspecificationsshallapplytoanFMEN-2308. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent)

SankenSanken electric

三墾三墾電氣株式會(huì)社

FMT2308

3Amps60VoltageN-ChannelPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FTK2308

60VN-ChannelEnhancement-ModeMOSFET

FS

First Silicon Co., Ltd

G2308

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheG2308utilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2308isuniversallyusedforallcommercial-industrialapplications. Features *SimpleDriveRequirement *SmallPackageOutline

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

G2308

N-CHANNELENHANCEMENTMODEPOWERMOSFET

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

G2308B

Oblong,Domed,PCBMount

Oblong,Domed,PCBMount RightAngleViewIndicatorArray TheG23XXBindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasstatusindicatorswhenusedinconjunctionw

idea

IDEA.lnc.

G2308E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheG2308Eutilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheSOT-23packageisuniversallyusedforallcommercial-industrialapplications. Features *Capableof2.5Vgatedrive *Loweron-r

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

G2308E

N-CHANNELENHANCEMENTMODEPOWERMOSFET

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

G2308S

Oblong,Domed,PCBMount

Oblong,Domed,PCBMount DirectViewIndicatorArray TheG23XXSindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasastatusindicatorwhenusedinconjunctionwith

idea

IDEA.lnc.

GL2308

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GM2308

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GM2308S

N-ChannelEnhancement-ModeMOSFETs

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

GT2308-V

GRAPHICOPERATIONTERMINALGOTSIMPLESeries

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

GT2308-VTBA

GRAPHICOPERATIONTERMINALGOTSIMPLESeries

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

GT2308-VTBD

GRAPHICOPERATIONTERMINALGOTSIMPLESeries

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

IDP2308

120W24V3.5A12V3ASMPSdemonstratorwithIDP2308

FeaturesofIDP2308 Integrated600Vstart-upcell IntegratedfloatingdriverforHBhigh-sideMOSFET Multi-modeoperationofPFC IntegratedPITregulatorforPFCcontroller ActiveX-CAPdischargefunctionsupportslowstand-bypowerconsumption ComprehensivesetofPFC/LLCprotectionfeatur

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDT2308

3.3VZERODELAYCLOCKMULTIPLIER

DESCRIPTION: TheIDT2308isahigh-speedphase-lockloop(PLL)clockmultiplier.Itisdesignedtoaddresshigh-speedclockdistributionandmultiplicationapplications.Thezerodelayisachievedbyaligningthephasebetweentheincomingclockandtheoutputclock,operablewithintherangeo

IDT

Integrated Device Technology, Inc.

IDT2308

3.3VZERODELAYCLOCKMULTIPLIER

FEATURES: ?Phase-LockLoopClockDistributionforApplicationsranging from10MHzto133MHzoperatingfrequency ?Distributesoneclockinputtotwobanksoffouroutputs ?Separateoutputenableforeachoutputbank ?Externalfeedback(FBK)pinisusedtosynchronizetheoutputs tothecl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    EMH2308-TL-E

  • 功能描述:

    MOSFET NCH+NCH 1.8V DRIVE SERIES

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi(安森美)
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ON
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2990
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原裝現(xiàn)貨假一賠十
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更多EMH2308-TL-E供應(yīng)商 更新時(shí)間2025-1-18 16:12:00