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ET-DLE055

DLPProjector

PanasonicPanasonic Semiconductor

松下松下電器

ET-DLE055

Fixed-FocusLens

PanasonicPanasonic Semiconductor

松下松下電器

FG055

GAUSSIANFILTERS

FaradayFaraday Technology

智原科技智原科技股份有限公司

FSF055D

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF055R

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ055D

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSJ055R

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYC055D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FSYC055R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FVDB-055B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

詳細參數(shù)

  • 型號:

    ED-055

  • 制造商:

    Farnell/Pro-Power

  • 功能描述:

    EDGING GROMMET 5.5MM 10M

  • 制造商:

    pro-power

  • 功能描述:

    EDGING GROMMET, 5.5MM, 10M

  • 功能描述:

    EDGING GROMMET, 5.5MM, 10M; Panel Thickness

  • Max:

    5.5mm; Grommet

  • Material:

    PE(Polyethylene); Grommet

  • Colour:

    Natural; Accessory

  • Type:

    Grommet; Body

  • Material:

    PE(Polyethylene);

  • Colour:

    Natural; External

  • Width:

    7.9mm;

  • Material:

    PE; Panel ;RoHS

  • Compliant:

    Yes

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2447
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105000
36個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
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ENDRIVE(常州能動)
2021+
SIP
537
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ENDRIVE常州能動
2407+
IC
30098
全新原裝!倉庫現(xiàn)貨,大膽開價!
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24+
N/A
60000
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ENDRIVE
24+
con
10000
查現(xiàn)貨到京北通宇商城
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ENDRIVE
24+
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35960
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NA
23+
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10000
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AZDisplays
5
全新原裝 貨期兩周
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AZ Displays
2022+
1
全新原裝 貨期兩周
詢價
24+
DIP
60
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更多ED-055供應(yīng)商 更新時間2025-3-20 15:00:00