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ECUV1H150JCV中文資料恩智浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
ECUV1H150JCV |
功能描述 | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
文件大小 |
478.77 Kbytes |
頁面數(shù)量 |
24 頁 |
生產(chǎn)廠商 | NXP Semiconductors |
企業(yè)簡稱 |
nxp【恩智浦】 |
中文名稱 | 恩智浦半導(dǎo)體公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-1 17:27:00 |
ECUV1H150JCV規(guī)格書詳情
400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA
The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF.
Features
● Frequency: 400--2400 MHz
● P1dB: 33 dBm @ 900 MHz
● Small--signal gain: 17.5 dB @ 900 MHz
● Third order output intercept point: 49 dBm @ 900 MHz
● Single 5 V supply
● Internally input prematched to 50 ohms
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CHINAXYJ |
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0603c |
9868 |
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3953 |
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4000 |
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970 |
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23+ |
589610 |
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24+ |
0603c |
68900 |
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新 |
2915 |
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35200 |
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