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EBE21EE8ABFA中文資料美光科技數(shù)據(jù)手冊(cè)PDF規(guī)格書
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EBE21EE8ABFA規(guī)格書詳情
2GB Unbuffered DDR2 SDRAM DIMM
EBE21EE8ABFA (256M words ×72 bits, 2 Ranks)
Features
? Double-data-rate architecture; two data transfers per clock cycle
? The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
? Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
? DQS is edge-aligned with data for READs; center aligned with data for WRITEs
? Differential clock inputs (CK and /CK)
? DLL aligns DQ and DQS transitions with CK transitions
? Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
? Data mask (DM) for write data
? Posted /CAS by programmable additive latency for better command and data bus efficiency
? Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
? /DQS can be disabled for single-ended Data Strobe operation
產(chǎn)品屬性
- 型號(hào):
EBE21EE8ABFA
- 制造商:
ELPIDA
- 制造商全稱:
Elpida Memory
- 功能描述:
2GB Unbuffered DDR2 SDRAM DIMM
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ELPIDA |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |