首頁>EBD11UD8ABDA-7A>規(guī)格書詳情

EBD11UD8ABDA-7A中文資料美光科技數(shù)據(jù)手冊PDF規(guī)格書

EBD11UD8ABDA-7A
廠商型號

EBD11UD8ABDA-7A

功能描述

1GB DDR SDRAM SO DIMM

文件大小

197.78 Kbytes

頁面數(shù)量

19

生產(chǎn)廠商 Elpida Memory
企業(yè)簡稱

ELPIDA美光科技

中文名稱

美光科技股份有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-10-28 9:00:00

EBD11UD8ABDA-7A規(guī)格書詳情

Description

The EBD11UD8ABDA is 128M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR SDRAM sealed in TCP package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture.

Features

? 200-pin socket type small outline dual in line memory module (SO DIMM)

- PCB height: 31.75mm

- Lead pitch: 0.6mm

? 2.5V power supply

? Data rate: 333Mbps/266Mbps (max.)

? 2.5 V (SSTL_2 compatible) I/O

? Double Data Rate architecture; two data transfers per clock cycle

? Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver

? Data inputs, outputs and DM are synchronized with DQS

? 4 internal banks for concurrent operation (Component)

? DQS is edge aligned with data for READs; center aligned with data for WRITEs

? Differential clock inputs (CK and /CK)

? DLL aligns DQ and DQS transitions with CK transitions

? Commands entered on each positive CK edge; data referenced to both edges of DQS

? Data mask (DM) for write data

? Auto precharge option for each burst access

? Programmable burst length: 2, 4, 8

? Programmable /CAS latency (CL): 2, 2.5

? Refresh cycles: (8192 refresh cycles /64ms)

- 7.8μs maximum average periodic refresh interval

? 2 variations of refresh

- Auto refresh

- Self refresh

產(chǎn)品屬性

  • 型號:

    EBD11UD8ABDA-7A

  • 制造商:

    ELPIDA

  • 制造商全稱:

    Elpida Memory

  • 功能描述:

    1GB DDR SDRAM SO DIMM

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ELPIDA
23+
NA
39960
只做進口原裝,終端工廠免費送樣
詢價