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MMSZ5234BS

Marking:E4;Package:SOD-323;200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–51VNominalZenerVoltage 5StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

MMSZ5234BS

Marking:E4;Package:SOD-323;Silicon Planar Zener Diodes

Features Totalpowerdissipation:Max.500mW. Widezenerreversevoltagerange2.4Vto39V. Smallplasticpackagesuitableforsurfacemounteddesign. Toleranceapproximately±5

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

NC7S02L6X

Marking:E4;Package:SIP6;TinyLogic HS 2-Input NOR Gate

Description TheNC7S02isasingle2?InputhighperformanceCMOSNOR Gate.AdvancedSiliconGateCMOSfabricationassureshighspeed andlowpowercircuitoperationoverabroadVCCrange.ESD protectiondiodesinherentlyguardbothinputsandoutputwithrespect totheVCCandGNDrails.Thr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NC7S02L6X-L22175

Marking:E4;Package:SIP6;TinyLogic HS 2-Input NOR Gate

Description TheNC7S02isasingle2?InputhighperformanceCMOSNOR Gate.AdvancedSiliconGateCMOSfabricationassureshighspeed andlowpowercircuitoperationoverabroadVCCrange.ESD protectiondiodesinherentlyguardbothinputsandoutputwithrespect totheVCCandGNDrails.Thr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJU7098AF1-C

Marking:E4;Package:SOT-23-6-1;0.05μV/°C max, Zero-Drift, Single Supply, Rail-to-Rail Output CMOS Operational Amplifier

FEATURES(V+=5V,Typicalvalue) ●LowOffsetVoltage15μVmax. ●Zero-Drift0.05μV/°Cmax. ●SupplyVoltageRange3Vto10V ●Rail-to-RailOutput(RL=10kΩ)20mVfromrail ●OutputCurrent(VO=4.5VatV+=5V)30mA ●DCPrecision Open-LoopVoltageGain140dB CMR,SVR130dB ●SupplyCurrent0.6mA ●

NJRCNew Japan Radio

新日本無線株式會社

PDTC124EQB

Marking:E4;Package:DFN1110D-3;50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC124EQB-Q

Marking:E4;Package:DFN1110D-3;50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?Lowpackageheightof0.5mm ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?QualifiedaccordingtoAEC-Q

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC144TM

Marking:E4;Package:SOT883;NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTC144TM

Marking:E4;Package:SOT883;NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver. DESCRIPTION NPNresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD15VS2UQ

Marking:E4;Package:SOT663;Double ESD protection diodes in SOT663 package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    E4

  • 制造商:

    FLIR COMMERCIAL SYSTEMS

  • 功能描述:

    Thermal Imager, IR Camera, 160x120, 60 Hz, 3.5 In. Color LCD, 19,200 Pixels, E-Series

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