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FFSB2065B

SiliconCarbideSchottkyDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSD2065B

SiliconCarbideSchottkyDiode650V,20A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSD2065B

SiliconCarbideSchottkyDiode650V,20A

SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065A

SiliconCarbideSchottkyDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSH2065BDN

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSM2065B

SiliconCarbideSchottkyDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSP2065A

SiliconCarbideSchottkyDiode650V,20A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSP2065B

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-220-2L

Features ?MaxJunctionTemperature175°C ?AvalancheRated94mJ ?HighSurgeCurrentCapacity ?PositiveTemperatureCoefficient ?EaseofParalleling ?NoReverseRecovery/NoForwardRecovery ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant Applications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFSPF2065A

SiCSchottkyBarrierDiode

FEATURES ·HighSurgeCurrentCapacity ·NoReverseRecovery/NoForwardRecovery ·EaseofParalleling ·NoReverseRecovery APPLICATIONS ·GeneralPurpose ·SMPS,SolarInverter,UPS ·PowerSwitchingCircuits

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HIC2065

VoltageRepeater

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福倍加福(北京)過程自動(dòng)化控制設(shè)備有限公司

HME2065

Armoireautoportantemodulaireenacierdouxdetype12

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HME2065

PAINTEDTEXTUREDGRAYRAL7035

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

IME2065

Armoireautoportantemodulaireenacierdouxdetype12

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

IME2065

DATASUBJECTTOCHANGEWITHOUTNOTLCE

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

LTC2065

2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers

FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2065

10μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifier

FEATURES APPLICATIONS nLowSupplyCurrent:10μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n5pATypical n50pAMaximum,–40°Cto85°C n150pAMaximum,–40°Cto125°C nIntegratedEMIFilter(90dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2065HFPBF

2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers

FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2065HFTRPBF

2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers

FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2065HUDPBF

2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers

FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2065HUDTRPBF

2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers

FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    E-ULN2065B

  • 功能描述:

    達(dá)林頓晶體管 1.5 Amp Quad Switch

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
22+
NA
30000
原裝現(xiàn)貨假一罰十
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ST
23+
DIP
18689
詢價(jià)
matsushita
24+
500000
行業(yè)低價(jià),代理渠道
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ST
24+
16-DIP
1414
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STMicroelectronics
23+
16-Dip
7750
全新原裝優(yōu)勢
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22+
NA
3000
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23+
N
10000
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ST/意法
22+
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30000
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STMicroelectronics
2022+
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38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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STM
23+
33500
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更多E-ULN2065B供應(yīng)商 更新時(shí)間2025-1-6 11:31:00