首頁 >E-ULN2065B>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SiliconCarbideSchottkyDiode | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSchottkyDiode650V,20A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSchottkyDiode650V,20A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSchottkyDiode | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-247-3L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSchottkyDiode | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSchottkyDiode650V,20A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-220-2L Features ?MaxJunctionTemperature175°C ?AvalancheRated94mJ ?HighSurgeCurrentCapacity ?PositiveTemperatureCoefficient ?EaseofParalleling ?NoReverseRecovery/NoForwardRecovery ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant Applications ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiCSchottkyBarrierDiode FEATURES ·HighSurgeCurrentCapacity ·NoReverseRecovery/NoForwardRecovery ·EaseofParalleling ·NoReverseRecovery APPLICATIONS ·GeneralPurpose ·SMPS,SolarInverter,UPS ·PowerSwitchingCircuits | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
VoltageRepeater | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福倍加福(北京)過程自動(dòng)化控制設(shè)備有限公司 | PF | ||
Armoireautoportantemodulaireenacierdouxdetype12 | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
PAINTEDTEXTUREDGRAYRAL7035 | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
Armoireautoportantemodulaireenacierdouxdetype12 | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
DATASUBJECTTOCHANGEWITHOUTNOTLCE | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
10μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifier FEATURES APPLICATIONS nLowSupplyCurrent:10μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n5pATypical n50pAMaximum,–40°Cto85°C n150pAMaximum,–40°Cto125°C nIntegratedEMIFilter(90dBRejectionat1.8 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD |
詳細(xì)參數(shù)
- 型號(hào):
E-ULN2065B
- 功能描述:
達(dá)林頓晶體管 1.5 Amp Quad Switch
- RoHS:
否
- 制造商:
Texas Instruments
- 配置:
Octal
- 晶體管極性:
NPN 集電極—發(fā)射極最大電壓
- VCEO:
50 V 發(fā)射極 - 基極電壓
- VEBO:
集電極—基極電壓
- 最大直流電集電極電流:
0.5 A
- 最大工作溫度:
+ 150 C
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
SOIC-18
- 封裝:
Reel
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
22+ |
NA |
30000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST |
23+ |
DIP |
18689 |
詢價(jià) | |||
matsushita |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
ST |
24+ |
16-DIP |
1414 |
詢價(jià) | |||
STMicroelectronics |
23+ |
16-Dip |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | |||
ST/意法 |
23+ |
N |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP會(huì)員,誠信經(jīng)營,一手貨源,原裝正品可零售! |
詢價(jià) | ||
STMicroelectronics |
2022+ |
- |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
STM |
23+ |
33500 |
詢價(jià) |
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