首頁 >DTC314TC,TK>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Digitaltransistors(built-inresistor) 600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Digitaltransistors(built-inresistor) 600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Digitaltransistors(built-inresistor) 600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Digitaltransistors(built-inresistor) 600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
Digitaltransistors(built-inresistor) 600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
InfraredEmittingDiodes(GaAs) TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES ?Compact ?Lowprofilepackage ?Low-cost ?Sidelookingplasticpackage APPLICATIONS ?Photointerrupters ?Opticalswitches ?Toys | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團 | KODENSHI | ||
Data-LineSurgeandESDProtectionDiodeArray | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 | ||
Data-LineSurgeandESDProtectionDiodeArray | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 | ||
ESDS31xData-LineSurgeandESDProtectionDiodeArray 1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 | ||
Data-LineSurgeandESDProtectionDiodeArray | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 |
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