DTC123E分立半導體產(chǎn)品的晶體管-雙極（BJT）-單預偏置規(guī)格書PDF中文資料

DTC123E屬于分立半導體產(chǎn)品的晶體管-雙極（BJT）-單預偏置。由安森美半導體公司制造生產(chǎn)的DTC123E晶體管 - 雙極（BJT）- 單，預偏置預偏置雙極晶體管具有內(nèi)部電阻器，設計用于在未施加輸入信號的情況下將器件保持在偏置或工作點附近。晶體管偏置可使晶體管更有效地工作，并產(chǎn)生穩(wěn)定、無失真的輸出信號。預偏置晶體管減少了所需的外部電路元器件數(shù)量，從而可降低項目成本。

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications.