DS1225集成電路（IC）的存儲器規(guī)格書PDF中文資料

DESCRIPTION

The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and writeprotection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to the popular bytewide 28-pin DIP standard.

FEATURES

10 years minimum data retention in the absence of external power

Data is automatically protected during power loss

Directly replaces 2k x 8 volatile static RAM or EEPROM

Unlimited write cycles

Low-power CMOS

JEDEC standard 28-pin DIP package

Read and write access times as fast as 150 ns

Full ±10 operating range

Optional industrial temperature range of

-40°C to +85°C, designated IND