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GFC9220

PChannelPowerMOSFET

GSG

Gunter Seniconductor GmbH.

HDM9220

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無錫市好達(dá)電子股份有限公司

HM9220

built-inMOS,Y,9Aconverter

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ICS9220

ProgrammableRambusTMXDRTMClockGenerator

IDT

Integrated Device Technology, Inc.

ICS9220B

ProgrammableRambusTMXDRTMClockGenerator

IDT

Integrated Device Technology, Inc.

IIRFR9220TRLPBF

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IIRFR9220TRLPBF

DynamicdV/dtRating

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

IIRFR9220TRLPBFA

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

IRFD9220

0.6A,200V,1.500Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9220

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-0.56A)

HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling

IRF

International Rectifier

IRFD9220

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9220PBF

HEXFETPowerMOSFET

HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free

IRF

International Rectifier

IRFD9220PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe

IRF

International Rectifier

IRFE9220

SimpleDriveRequirements

IRF

International Rectifier

IRFF9220

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9220

-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs

-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl

Intersil

Intersil Corporation

IRFF9220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala

IRF

International Rectifier

IRFF9220

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala

IRF

International Rectifier

IRFR9220

PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A)

DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?

IRF

International Rectifier

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8513
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80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
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300
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更多DD9220供應(yīng)商 更新時間2024-12-31 14:13:00

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