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DEM-314GT-C

DEM-314GTD-LinkCompatibleTransceiverSFP1000Base-ZX(1550nm,SMF,80km,LC,DOM)

Features ATGBICSDEM-314GT?1000Base-ZXsupportsadistanceofupto80kmoversinglemodefibre?(SMF)usingawavelengthof1550nmviaanLCconnector. ?Digitalopticalmonitoring(DOM)supportisalsopresentenablingreal-time?monitoringoftheparametersofthefibre?optictransceiver. ?Ourpr

ATGBICS

ATGBICS by Approved Technology

DR314

GERMANIUMDOIDES

GERMANIUMDIODES

AAC

American Accurate Components, Inc.

DR314

GERMANIUMDOIDES

AMMSEMI

American Microsemiconductor

DTC314T

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TS

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES ?Compact ?Lowprofilepackage ?Low-cost ?Sidelookingplasticpackage APPLICATIONS ?Photointerrupters ?Opticalswitches ?Toys

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314DBVR

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec

TI1Texas Instruments

德州儀器

EVAL-ADXL314Z

?200gRange,3-AxisDigitalAccelerometer

GENERALDESCRIPTION TheADXL314isa±200grange,13-bitresolution,3-axisdigital accelerometer.Thedigitaloutputdataisformattedas16-bit,twos complementdataandisaccessiblethroughaserialperipheral interface(SPI),3-wireor4-wire,oranI2Cdigitalinterface. Anintegrated

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

EVAL-ADXL314Z

±200gRange,3-AxisDigitalAccelerometer

GENERALDESCRIPTION TheADXL314isa±200grange,13-bitresolution,3-axisdigital accelerometer.Thedigitaloutputdataisformattedas16-bit,twos complementdataandisaccessiblethroughaserialperipheral interface(SPI),3-wireor4-wire,oranI2Cdigitalinterface. Anintegrated

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

F-314X

ChassisMountSingleSecondary

TRIAD

TRIAD MAGNETICS

FDG314P

DigitalFET,P-Channel

GeneralDescription ThisP-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildSemiconductor’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeonstateresistanceatlowgatedriveconditions.Thisdeviceisdesigned

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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YCLELECTRONICS
23+
DIP
650
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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YCL
24+
DIP
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
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ADI/亞德諾
23+
20000
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ADI/亞德諾
23+
EB/PCB
3000
只做原裝正品,假一賠十
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YCLELECTRONICS
23+
DIP
10000
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24+
N/A
62000
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ycl
23+
NA
397
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ZHOURI(洲日)
21+
插件,P=2.54mm
4750
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2410+
con
9000
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9
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更多DC-314R供應(yīng)商 更新時(shí)間2025-1-17 15:05:00