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D6030D	文件：190.41 Kbytes Page：2 Pages	SIL3 Switch/Proximity Relay-Out Repeater FEATURES SIL3/SC3 2fullyindependentchannels Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit	GMI G.M. International	GMI
D6030S	文件：190.41 Kbytes Page：2 Pages	SIL3Switch/ProximityRelay-OutRepeater FEATURES SIL3/SC3 2fullyindependentchannels Highvoltage/currentratingrelayoutput Fieldopenandshortcircuitdetection In-fieldprogrammabilitybyDIPSwitch Threeportisolation,Input/Output/Supply HighDensity,twochannelsperunit	GMI G.M. International	GMI
DUR6030WT	文件：552.46 Kbytes Page：3 Pages	Ultra-fastswitching	Littelfuselittelfuse 力特力特公司	Littelfuse
EPE6030	文件：71.4 Kbytes Page：2 Pages	10Base-TModulewithEnhancedCommonModeAttenuation	PCA PCA ELECTRONICS INC.	PCA
EPE6030G	文件：155.29 Kbytes Page：1 Pages	10Base-TInterfaceModulewithEnhancedCommonModeAttenuation	PCA PCA ELECTRONICS INC.	PCA
FBR6030	文件：143.47 Kbytes Page：2 Pages	60AmpHighVoltageSCHOTTKYBARRIERRECTIFIERSMechanicalDimensions Features ■HIGHCURRENTCAPABILITY WITHLOWVF ■HIGHEFFICIENCYw/LOWPOWERLOSS ■HIGHSURGEVOLTAGEAND TRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0	FCIFirst Components International 戈采戈采企業(yè)股份有限公司	FCI
FDB6030	文件：401.43 Kbytes Page：10 Pages	N-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDB6030	文件：473.58 Kbytes Page：4 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDB6030BL	文件：401.43 Kbytes Page：10 Pages	N-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDB6030BL	文件：328.74 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDB6030L	文件：473.58 Kbytes Page：4 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDB6030L	文件：329.15 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=48A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDD6030	文件：169.53 Kbytes Page：6 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6030	文件：107.97 Kbytes Page：5 Pages	N-ChannelPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6030BL	文件：74.47 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6030BL	文件：107.97 Kbytes Page：5 Pages	N-ChannelPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6030BL	文件：352.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDD6030L	文件：169.53 Kbytes Page：6 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6030L	文件：118.78 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6030L	文件：352.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市福安甌科技有限公司	D6030D	TI	22+	SBGA	1000	⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢(xún)!⊙	詢(xún)價(jià)
深圳市星佑電子有限公司	D6030D	TI	00/01+	SBGA	105	全新原裝100真實(shí)現(xiàn)貨供應(yīng)	詢(xún)價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	D6-0317R	SICHUANINSTRUMENT	23+		10000	原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢(xún)價(jià)
深圳市東來(lái)寶電子科技有限公司	D6-0317R	SICHUANINSTRUMENT	22+		23509	鄭重承諾只做原裝進(jìn)口貨	詢(xún)價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	D603A	AO/萬(wàn)代	23+	SOT-252-4L	10000	公司只做原裝正品	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	D603A	VBSEMI/臺(tái)灣微碧	23+	TO252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	D603A	AO/萬(wàn)代	SOT-252-4L	22+	6000	十年配單,只做原裝	詢(xún)價(jià)
深圳市躍創(chuàng)芯科技有限公司	D603A	AO/萬(wàn)代	22+	SOT-252-4L	25000	只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單	詢(xún)價(jià)
深圳市創(chuàng)新跡電子有限公司	D603A	AO/萬(wàn)代	22+	SOT-252-4L	25000	只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單	詢(xún)價(jià)
深圳市宏捷佳電子科技有限公司	D603A	AO/萬(wàn)代	24+	SOT-252-4	12300	獨(dú)立分銷(xiāo)商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢(xún)價(jià)

更多D6030D供應(yīng)商更新時(shí)間2024-10-28 14:02:00

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