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RFL2N05

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFL2N05

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RT2N05M

COMPOSITETRANSISTORWITHRESISTORFORSWITCHINGAPPLICATIONSILICONNPNEPITAXIALTYPE

DESCRIPTION RT2N05Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=47KΩ,R2=47KΩ) ●Minipackageforeasymounting APPLICATION Invertedcircuit,switchingcircuit,interfacecircuit,drivercircuit

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

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更多D2N05Z供應(yīng)商 更新時(shí)間2024-12-22 10:50:00