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CYRS15B101N中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
CYRS15B101N規(guī)格書(shū)詳情
Features
? 1-Mbit ferroelectric random access memory (F-RAM) logically organized as (64K × 16) or (128K × 8)
- High-endurance 10 trillion (1013) reads/writes
- 121 year data retention (see “Data retention and endurance” on page 13)
- Infineon instant non-volatile write technology
- Page-mode operation for 30 ns cycle time
- Advanced high-reliability ferroelectric process
? SRAM compatible
- Industry-standard (64K × 16)/(128K × 8) SRAM pinout
? 60 ns access time, 90 ns cycle time
? Advanced features
- Software-programmable block write-protect
? Low power consumption (pre/post 150 krad TID radiation)
? 20 mA/20 mA active current at 25 MHz
? 700 μA/5 mA standby current
? 20 μA/8 mA sleep mode current
? Low-voltage operation: VDD = 2.0 V to 3.6 V
? Military temperature: –55°C to +125°C
? 44-pin ceramic TSOP package
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
全宇晰 |
23+ |
NA/ |
3750 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
CYPRESS |
24+ |
QFP |
425 |
詢價(jià) | |||
CYSTEK/全宇昕 |
23+ |
TO-220F |
6000 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CYPRESS |
23+ |
SSOP-16 |
56696 |
公司原裝現(xiàn)貨!主營(yíng)品牌!可含稅歡迎查詢 |
詢價(jià) | ||
Infineon |
23+ |
PG-VFBGA-124 |
15500 |
英飛凌優(yōu)勢(shì)渠道全系列在售 |
詢價(jià) | ||
CYSTEK/全宇昕 |
23+ |
TO-220F |
340909 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
24+ |
N/A |
57000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
INFINEON/英飛凌 |
23+ |
CG-SSOP-16 |
28611 |
為終端用戶提供優(yōu)質(zhì)元器件 |
詢價(jià) | ||
Cypress |
22+ |
120TQFP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Cypress |
21+ |
120TQFP |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) |
