CY7C277-40DMB中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description

The CY7C277 is a high-performance 32K word by 8-bit CMOS PROMs. It is packaged in the slim 28-pin 300-mil package. The ceramic package may be equipped with an erasure window; when exposed to UV light, the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide algorithms.

The CY7C277 offers the advantages of low power, superior performance, and high programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be 100 tested, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming.

Features

? Windowed for reprogrammability

? CMOS for optimum speed/power

? High speed

— 30-ns address set-up

— 15-ns clock to output

? Low power

— 60 mW (commercial)

— 715 mW (military)

? Programmable address latch enable input

? Programmable synchronous or asynchronous output enable

? On-chip edge-triggered output registers

? EPROM technology, 100 programmable

? Slim 300-mil, 28-pin plastic or hermetic DIP

? 5V ±10 VCC, commercial and military

? TTL-compatible I/O

? Direct replacement for bipolar PROMs

? Capable of withstanding greater than 2001V static discharge