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CY7C25632KV18-550BZC集成電路(IC)的存儲器規(guī)格書PDF中文資料

CY7C25632KV18-550BZC
廠商型號

CY7C25632KV18-550BZC

參數(shù)屬性

CY7C25632KV18-550BZC 封裝/外殼為165-LBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC SRAM 72MBIT PARALLEL 165FBGA

功能描述

72-Mbit QDR? II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

封裝外殼

165-LBGA

文件大小

496.32 Kbytes

頁面數(shù)量

31

生產(chǎn)廠商 CypressSemiconductor
企業(yè)簡稱

Cypress賽普拉斯

中文名稱

賽普拉斯半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-1 10:20:00

CY7C25632KV18-550BZC規(guī)格書詳情

Functional Description

The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

Features

■ Separate independent read and write data ports

? Supports concurrent transactions

■ 550 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

? SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

? Supported for D[x:0], BWS[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR? II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]

? Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

產(chǎn)品屬性

  • 產(chǎn)品編號:

    CY7C25632KV18-550BZC

  • 制造商:

    Cypress Semiconductor Corp

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,QDR II+

  • 存儲容量:

    72Mb(4M x 18)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-LBGA

  • 供應(yīng)商器件封裝:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 72MBIT PARALLEL 165FBGA

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
Cypress
165-FBGA
4600
Cypress一級分銷,原裝原盒原包裝!
詢價
CYPRESS
22+
BGA
8000
原裝正品支持實(shí)單
詢價
CYPRESS
24+
FBGA
23000
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
INFINEON/英飛凌
23+
P-BGA-165
28611
為終端用戶提供優(yōu)質(zhì)元器件
詢價
Cypress
22+
NA
136
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
INFINEON
23+
P-BGA-165
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢價
Cypress Semiconductor Corp
23+
165-FBGA(13x15)
7535
正品原裝貨價格低
詢價
CypressSemiconductorCorp
19+
68000
原裝正品價格優(yōu)勢
詢價
Cypress Semiconductor Corp
24+
165-FBGA(13x15)
56200
一級代理/放心采購
詢價
CYPRESS
22+
BGA
4436
原裝現(xiàn)貨
詢價