CY62147CV25中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

Functional Description

The CY62147CV25/30/33 are high-performance CMOS static RAMs organized as 256K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life? (MoBL?) in portable applications such as cellular telephones. The devices also have an automatic power-down feature that significantly reduces power consumption by 80 when addresses are not toggling.

Features

? High Speed

— 55 ns and 70 ns availability

? Voltage range:

— CY62147CV25: 2.2V–2.7V

— CY62147CV30: 2.7V–3.3V

— CY62147CV33: 3.0V–3.6V

? Pin Compatible with CY62147V

? Ultra-low active power

— Typical active current: 1.5 mA @ f = 1 MHz

— Typical active current: 5.5 mA @ f = fmax (70 ns speed)

? Low standby power

? Easy memory expansion with CE and OE features

? Automatic power-down when deselected

? CMOS for optimum speed/power