CXK58512M中文資料索尼數(shù)據(jù)手冊PDF規(guī)格書

Description

The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption, high speed.

The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.

Features

? Fast access time (Access time)

-55LL 55ns (Max.)

-70LL 70ns (Max.)

-10LL 100ns (Max.)

? Low standby current 10μA (Max.)

? Low data retention current 6μA (Max.)

? Single +5V supply: +5V ± 10

? Low voltage data retention: 2.0V (Min.)

? Broad package line-up

CXK58512TM 8mm × 20mm 32 pin TSOP package

CXK58512M 525mil 32 pin SOP Package

Function

65536-word × 8 bit static RAM