CXK581000AM中文資料索尼數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.

Special feature are low power consumption, high speed and broad package line-up.

The CXK581000ATM/AYM/AM/AP ia a suitable RAM for portable equipment with battery back up.

Features

? Fast access time:

CXK581000ATM/AYM/AM/AP (Access time)

-55LL/55SL 55ns (Max.)

-70LL/70SL 70ns (Max.)

-10LL/10SL 100ns (Max.)

? Low standby current:

CXK581000ATM/AYM/AM/AP

-55LL/70LL/10LL 20μA (Max.)

-55SL/70SL/10SL 12μA (Max.)

? Low data retention current

CXK581000ATM/AYM/AM/AP

-55LL/70LL/10LL 12μA (Max.)

-55SL/70SL/10SL 4μA (Max.)

? Single +5V supply: +5V ±10

? Low voltage data retention: 2.0V (Min.)

? Broad package line-up

? CXK581000ATM/AYM

8mm × 20mm 32 pin TSOP package

? CXK581000AM 525mil 32 pin SOP package

? CXK581000AP 600mil 32 pin DIP package

Functions

131072-word × 8-bit static RAM