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D1899

TO-252Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

FTD1899

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighTransitionFrequency

FS

First Silicon Co., Ltd

FTD1899I

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●HighhFEhFE=100to400 ●LowVCE(sat)VCE(sat)=0.25V

FS

First Silicon Co., Ltd

ISCN1899

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KTD1899

PowerTransistor

FEATURES HighVCEO,VCEO=80V. HighIC,IC=1A(DC). GoodHFELinearity. LowVCE(sat). Complementthe2SB1260. APPLICATIONS NPNsilicontransistor.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

MM1899

Lownoise300mALDO

MITSUMIMitsumi Electronics, Corp.

三美三美電機株式會社

NTE1899

IntegratedCircuitDualAudioPowerAmp,5.8W(22WBTL)

Description: TheNTE1898andNTE1899aredualaudiopoweramplifiersina12–LeadSIPtypepackagedesignedforuseashighperformance,car–audiopoweramplifiersinconsumerapplications.Thesedevicesfeaturehighpower,lowdistortion,andlownoisealongwithvarioustypesofprotectioncirc

NTE

NTE Electronics

SD1899

RF&MICROWAVETRANSISTORSSATELLITECOMMUNICATIONSAPPLICATIONS

DESCRIPTION TheSD1899isacommonbasesiliconNPNbipolardeviceoptimizedfor1.6GHzSATCOMapplications. SD1899offerssuperiorgainandcollectorefficiency,makingitanidealchoiceforClassCpoweramplifiersusedinportableaswellasfixedSATCOMterminals. ■REFRACTORY/GOLDMETALL

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

SD1899

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASISD1899isaCommonBaseDeviceDesignedforclassCApplications. FEATURESINCLUDE: ?GoldMetalization ?Input/OutputMatching ?DiffusedBallastResistors

ASI

Advanced Semiconductor

SMPU1899

N-ChannelSiliconJunctionField-EffectTransistors

SmallOutline(SurfaceMount)PackageDevices

InterFET

InterFET Corporation

詳細參數(shù)

  • 型號:

    CTS1899

  • 功能描述:

    Logic IC

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16355
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