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CSM360B

Surface Mount Schottky Barrier Rectifiers Reverse Voltage 60V Forward Current 3.0A

1.FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0. ?Lowpowerloss,highefficiency. ?Foruseinlowvoltagehighfrequencyinverters,freewheeling, andpolarityprotectionapplications. ?Guardingforovervoltageprotection. ?Hightemperature

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

CSMA360

3.0Amp.SurfaceMountSchottkyBarrierDiodes

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CY360

StepperSystemController

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

DR360

HIGHCURRENT,HIGHTEMPERATUREINDUCTORS

DATATRONICS

Datatronic Distribution, Inc.

EE360

High-EndMoistureinOilSensor

Features Themoistureinoilcanbeexpressedinabsoluteorrelativeterms. Wateractivityawistherelativemeasureformoistureinoil.Itrepresentstheratiobetweentheactualamountofdissolved waterandthemaximumpossibleamountofdissolvedwaterintheoilatacertaintemperatur

EPLUSE

E+E Elektronik Ges.m.b.H

ENC-360

360WProgrammableDesktopTypeBatteryCharger

MEANWELLMean Well Enterprises Co., Ltd.

明緯電子明緯（廣州）電子有限公司

ENP-360

360WLevelVIDesktopTypePowerSupply

MEANWELLMean Well Enterprises Co., Ltd.

明緯電子明緯（廣州）電子有限公司

EVAL-ADuCM360QSPZ

LowPower,PrecisionAnalogMicrocontrollerwithDualSigma-DeltaADCs,ARMCortex-M3

ADAnalog Devices

亞德諾亞德諾半導體技術有限公司

F-360U

ChassisMount:Universal

TRIAD

TRIAD MAGNETICS

FCN360

RECTANGULARCONNECTORS

FujitsuFujitsu Component Limited.

富士通富士通株式會社

FDN360

SingleP-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsui

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDN360

SingleP-ChannelMOSFET

Features Lowgatecharge(6.2nCtypical) HighperformancetrenchtechnologyforextremelylowRDS(ON). HighpowerversionofindustryStandardSOT-23package. higherpowerhandlingcapability. VDS(V)=-30V D=-2A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

FDN360P

SingleP-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsui

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDN360P

SingleP-Channel,PowerTrenchMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FDN360P

SingleP-ChannelMOSFET

Features Lowgatecharge(6.2nCtypical) HighperformancetrenchtechnologyforextremelylowRDS(ON). HighpowerversionofindustryStandardSOT-23package. higherpowerhandlingcapability. VDS(V)=-30V D=-2A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

FDN360P

P-Channel2.5V(D-S)MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-linepower lossandfastswitchingarerequired. Features Lowgatecharge(6.2nCtypical) HighperformancetrenchtechnologyforextremelylowRDS(ON). Highpowerversionofi

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

FDS360

MonolithicDualSwitchingDiodeCommonAnode

FS

First Silicon Co., Ltd

FM360

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER(VOLTAGERANGE20to100VoltsCURRENT3.0Amperes)

RECTRON

Rectron Semiconductor

FM360

Siliconepitaxialplanertype

Siliconepitaxialplanertype Features ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-OUtilizingFlameRetardantEpoxyMoldingCompound. ●Forsurfacemountedapplications. ●ExceedsenvironmentalstandardsofMIL-S-19500/228 ●Lowleakagecurrent.

FORMOSAFormosa MS

美麗微半導體美麗微半導體股份有限公司

FM360

ChipSchottkyBarrierDiodes

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

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Luminus
20000
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LUM
22+
NA
30000
100%全新原裝 假一賠十
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24+
20
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23+
10000
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更多CSM360B供應商 更新時間2025-1-3 9:30:00

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