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EMD06N60A

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD06N60CS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD06N60F

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FMC06N60ES

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMC06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMI06N60ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMP06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMP06N60ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMP06N60ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMV06N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

詳細(xì)參數(shù)

  • 型號：

    CMT06N60

  • 功能描述：

    POWER FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
CHAMPION
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
CMT
2016+
TO-220
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
CMT
25+23+
TO-220
27679
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
ON/安森美
23+
SOT23
69820
終端可以免費供樣,支持BOM配單!
 詢價
CHAMP
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
 詢價
虹冠
2022+
TO-220
12888
原廠代理 終端免費提供樣品
 詢價
CMT
22+
TO-220
8900
英瑞芯只做原裝正品!!!
 詢價
虹冠(臺灣)
23+
TO-220/TO-220F
4000
正品原裝貨價格低
 詢價
CHAMPION
2023+
TO220
7770
進(jìn)口原裝現(xiàn)貨
 詢價
CMT
24+
NA/
3264
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
更多CMT06N60供應(yīng)商 更新時間2025-4-15 9:00:00

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