CMPA5585030F開(kāi)發(fā)板套件編程器的射頻評(píng)估開(kāi)發(fā)套件開(kāi)發(fā)板規(guī)格書(shū)PDF中文資料

CMPA5585030F屬于開(kāi)發(fā)板套件編程器的射頻評(píng)估開(kāi)發(fā)套件開(kāi)發(fā)板。由WOLFSPEED, INC.制造生產(chǎn)的CMPA5585030F射頻評(píng)估和開(kāi)發(fā)套件，開(kāi)發(fā)板本系列中的產(chǎn)品適用于在已知實(shí)施環(huán)境中，提供能訪問(wèn)射頻相關(guān)器件的功能或者有助于訪問(wèn)該功能。所含的焦點(diǎn)產(chǎn)品范圍從射頻信號(hào)鏈元器件（如放大器和檢測(cè)器）到模塊化收發(fā)器，以及不直接包含焦點(diǎn)產(chǎn)品的適配器硬件，但此類硬件可供方便地訪問(wèn)用戶單獨(dú)提供的特定射頻產(chǎn)品或系列。

Description

Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). GaN has superior properties compared to silicon or

gallium arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs

also offer greater power density and wider bandwidths compared to Si

and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic

flanged package for optimal electrical and thermal performance.

Features

? 25 dB Small Signal Gain

? 30 W Typical PSAT

? Operation up to 28 V

? High Breakdown Voltage

? High Temperature Operation

? Size 1.00 x 0.385 inches

Applications

? Point to Point Radio

? Communications Radar

? Satellite Communication Uplink