Description

Wolfspeed’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN

has superior properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and higher thermal

conductivity. GaN HEMTs also offer greater power density and wider bandwidths

compared to Si and GaAs transistors. This MMIC enables extremely wide

bandwidths to be achieved in a small footprint screw-down package.

Features

? 17 dB Small Signal Gain

? 25 W Typical PSAT

? Operation up to 50 V

? High Breakdown Voltage

? High Temperature Operation

? 0.5” x 0.5” total product size

Applications

? Ultra Broadband Amplifiers

? Test Instrumentation

? EMC Amplifier Drivers

CMPA0060025F屬于開發(fā)板，套件，編程器 > 射頻評估和開發(fā)套件，開發(fā)板。WOLFSPEED, INC.制造生產(chǎn)的CMPA0060025F射頻評估和開發(fā)套件，開發(fā)板本系列中的產(chǎn)品適用于在已知實(shí)施環(huán)境中，提供能訪問射頻相關(guān)器件的功能或者有助于訪問該功能。所含的焦點(diǎn)產(chǎn)品范圍從射頻信號鏈元器件（如放大器和檢測器）到模塊化收發(fā)器，以及不直接包含焦點(diǎn)產(chǎn)品的適配器硬件，但此類硬件可供方便地訪問用戶單獨(dú)提供的特定射頻產(chǎn)品或系列。