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MMD60R580P

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580PB

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580PBRH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580PBRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD60R580PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD60R580PRH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580Q

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD60R580Q

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD60R580QRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMD60R580QRH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580P

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580P

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF60R580PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF60R580PTH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580Q

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R580QTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF60R580QTH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R580P

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R580PTH

600V0.58(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMIS60R580PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Cmos/廣東場(chǎng)效應(yīng)
1年內(nèi)
TO-220F
150000
原廠FAE技術(shù)支持 共奕芯城一站式電子元器件采購(gòu)平臺(tái)支
詢價(jià)
24+
N/A
58000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
Cmos/鍦烘晥搴斿崐瀵間綋
23
TO-220F
100000
N鍦?
詢價(jià)
Tamura
24+
垂直式 4 PC 引腳
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
更多CMF60R580Q供應(yīng)商 更新時(shí)間2024-11-8 10:02:00