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CJP02N60中文資料長(zhǎng)電科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

CJP02N60
廠商型號(hào)

CJP02N60

功能描述

Power Filed Effect Transistor

文件大小

197.59 Kbytes

頁(yè)面數(shù)量

3 頁(yè)

生產(chǎn)廠商 Jiangsu Changjiang Electronics Technology Co., Ltd
企業(yè)簡(jiǎn)稱(chēng)

JIANGSU長(zhǎng)電科技

中文名稱(chēng)

江蘇長(zhǎng)電科技股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-31 14:20:00

CJP02N60規(guī)格書(shū)詳情

General Description

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

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FEATURES

◆ Robust High voltage Termination

◆ Avalanche Energy Specified

◆ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

◆ Diode is Characterized for Use in Bridge Circuits

◆ IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào):

    CJP02N60

  • 制造商:

    JIANGSU

  • 制造商全稱(chēng):

    Jiangsu Changjiang Electronics Technology Co., Ltd

  • 功能描述:

    Power Filed Effect Transistor

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