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CIL21N100MNC

It has ferrite and 100 Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

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CIL21N100MNE

Ithasferriteand100Agasinternalconductors,theCILSerieshasexcellentQcharacteristicsandeliminatecrosstalk.

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IXFK21N100F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D

IXYS

IXYS Corporation

IXFK21N100F

HiPerRFPowerMOSFETs

Features ?RFCapableMOSFETs ?DoubleMetalProcessforLowGateResistive ?AvalancheRated ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?DC-DCConverters ?Switch-ModeandResonant-ModePowerSupplies,>500kHzSwitching ?D

IXYS

IXYS Corporation

IXFK21N100F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.50Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK21N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.50Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK21N100Q

HiPerFETPowerMOSFETsQ-CLASS

HiPerFET?PowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on

IXYS

IXYS Corporation

IXFN21N100Q

HiPerFETTMPowerMOSFETsQ-Class

SingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?UnclampedInductiveSwitching(UIS)rated ?LowRDS(on) ?Fastintrinsicdiode ?Int

IXYS

IXYS Corporation

IXFN21N100Q

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage -VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·Switchingapplication ·DC-DCconverters ·Batterychargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR21N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CIL21N100MNC

  • 功能描述：

    It has ferrite and 100% Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
92000
詢價(jià)
Samsung
23+
SMD
9868
專做原裝正品,假一罰百!
 詢價(jià)
SAMSUNG/三星
22+
SMD
96000
原裝現(xiàn)貨樣品可售
 詢價(jià)
SAMSUNG
2016+
SMD
4000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
Samsung
19+
O805
67882
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
三星
25+23+
0805
61845
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
SAMSUNG
20+
電感器
120000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
SAMSUNG/三星
23+
0805
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SAMSUNG
2013
O805
116000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
SAMSUNG
INDUCTOR
8560
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
 詢價(jià)
更多CIL21N100MNC供應(yīng)商 更新時(shí)間2025-5-20 14:31:00

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