首頁 >CHM4946JGP>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DualN-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT4.5Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
DualN-Channel60V(D-S)175?CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
DualN-Channel60-V(D-S)MOSFETHalogen-free | DINTEK Din-Tek Semiconductor | DINTEK | ||
DualN-Channel60-V(D-S)MOSFET | DINTEK Din-Tek Semiconductor | DINTEK | ||
CONTROLDEVICES-BEAMLEADPINDIODES DESCRIPTION SemiconductormesabeamleadPINdiodesaredesignedforverylowinductance,lowresistanceandmoderatelylowcapacitancewithultrafastswitchingcharacteristics.Thestructuraldetailsincludethermaloxidejunctionpassivationthusprovidingreliableoperationwithstablejunc | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET(60V,5A) Description TheAdvancedPowerMOSFETSprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness Features ?RDS(on) | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
1.0AMP.FASTRECOVERYRECTIFIERS ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | JGDJinan Gude Electronic Device 濟(jì)南固锝電子濟(jì)南固锝電子器件有限公司 | JGD | ||
QUADVOLTAGEREGULATORWITHINHIBITANDRESET DESCRIPTION TheL4946isaquadoutputlowdropvoltageregulator.Thefouroutputsarealowdrop10Vat125mA(VO1),a8Vat250mA(VO2),a5Vat200mA(VO3)andalowdrop5Vst-bylineat100mA(VO4). TheICincludesamonitoringcircuittowarnifalowvoltageornovoltageconditioni | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
QUADVOLTAGEREGULATORWITHINHIBITANDRESET DESCRIPTION TheL4946Bisaquadoutputlowdropvoltageregulator.Thefouroutputsarealowdrop10Vat125mA(VO1),a8.5Vat250mA(VO2),a5Vat200mA(VO3)andalowdrop5Vst-bylineat100mA(VO4). TheICincludesamonitoringcircuittowarnifalowvoltageornovoltageconditio | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-ChannelEnhancementMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH |
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