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CGY1034

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

CK1034

CKROTARYSWITCH

FEATURES Standard30°indexing, 60°and90°available Moulded27.5mm diameter Singlewaferswitch Maximum12positions Upto4polesperswitch Shorting(makebeforebreak30°indexingonly) ornon-shorting(breakbeforemake) Mouldedstoporadjustablestopsto restrictnumberofposit

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

CLNS-T1034Z

VariableCoils

10mmTYPE10PA FrequencyRange:10-200kHz InductanceRange:1-56mH TemperatureCoefficient:TC(L)220±220ppm/°Cmax Features ?Thelargerdrumandcupcoreproduceshighinductanceand greatlyimprovessaturationlevels.Thisincreasedinductance makesthiscoilidealforo

Toko

TOKO, Inc

CM1034

S-8DoubleContactBayonetBase

S-8DoubleContactBayonetBase S-8DoubleContactIndexBase S-11SingleContactBayonetBase

CML

Chicago Miniature Lamp,inc

CM1034

ContactBayonetBase

S-8DoubleContactBayonetBase S-8DoubleContactIndexBase S-11SingleContactBayonetBase

VCC

Visual Communications Company

CSP1034C

Host-BasedControllerV.92ModemChipSet

Introduction TheDSP1648C,host-acceleratedmodemchipisanexcitingnewupgradetoAgereSystemsInc.lineofhost-basedcontrollermodems.TheDSP1648CupgradesthetechnologiesfoundintheDSP1648V.90modemsolutiontothenewITU-TrecommendationsV.92andV.44communicationindustrystand

agere

Agere Systems

CXA1034M

CXA1034P,M

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

CXG1034TN

ReceivingMixer

Description TheCXG1034TNisareceivingmixerMMIC.ThisICisdesignedusingtheSony’sGaAsJ-FETprocess. Features ?LowdistortionInputIP3=+1.5dBm(Typ.) ?LowLOinputpoweroperationPLO=–15dBm ?RF,LOinputmatchingcircuit ?Single3Vpowersupplyoperation ?10-pinTSSOPpac

SonySONY

索尼索 尼

D1034

SIL3Switch/ProximityDetectorInterfaceDIN-RailModelsD1034S,D1034D

Features: SIL3accordingtoIEC61508 Tproof=1/2years(10/20oftotalSIF). SIL2accordingtoIEC61508 Tproof=10years(10oftotalSIF). PFDavg(1year)8.41E-05,SFF93.24. fullyindependentchannels. InputfromZone0(Zone20),Division1, installationinZone2,Divisi

GMI

G.M. International

D1034DB

SIL3Switch/ProximityDetectorInterfaceDIN-RailModelsD1034S,D1034D

Features: SIL3accordingtoIEC61508 Tproof=1/2years(10/20oftotalSIF). SIL2accordingtoIEC61508 Tproof=10years(10oftotalSIF). PFDavg(1year)8.41E-05,SFF93.24. fullyindependentchannels. InputfromZone0(Zone20),Division1, installationinZone2,Divisi

GMI

G.M. International

D1034SB

SIL3Switch/ProximityDetectorInterfaceDIN-RailModelsD1034S,D1034D

Features: SIL3accordingtoIEC61508 Tproof=1/2years(10/20oftotalSIF). SIL2accordingtoIEC61508 Tproof=10years(10oftotalSIF). PFDavg(1year)8.41E-05,SFF93.24. fullyindependentchannels. InputfromZone0(Zone20),Division1, installationinZone2,Divisi

GMI

G.M. International

D1034UK

METALGATERFSILICONFET(GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET80W-28V-500MHzPUSH-PULL)

SEME-LAB

Seme LAB

DDC1034

3W,WideInputRangeSMD,Single&DualOutputDC/DCConverters

MPSIndustriesDDC10003WDC/DCsareingull-wingSMTpackageandmeet245oC/10secinsolder-reflowforleadfreeprocess. Theseriesconsistsof21modelsthatoperateoverinputvoltagerangesof9-18VDC,18-36VDCand36-75VDCwhichprovidepreciselyregulatedoutputvoltagesof3.3V,5V,12V,

MPSINDMPS Industries, Inc.

美國芯源

DL-LS1034

REDLASERDIODE

Features ?Shortwavelength:635nm(Typ.) ?Highoutputpower:20mWCW ?Lowthresholdcurrent:Ith=40mA(Typ.) ?Lowoperatingvoltage:Vop=2.3V(Typ.) Applications Linemarker,Leveler

SANYOSanyo

三洋三洋電機(jī)株式會社

E1034S

4C187/26BCSR-PVCPVCSound,Alarm&SecurityCable

GENERALGeneral Electric

通用電氣公司美國通用電氣公司

EPR1034

T1/CEPT/ISDN-PRIInterfaceTransformers

PCA

PCA ELECTRONICS INC.

F1034

HIGHRELIABILITYFORLOWCOST

FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR

PETERMANN

PETERMANN-TECHNIK

F1034

PATENTEDGOLDMETALIZEDSILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR

Polyfet

Polyfet RF Devices

FDME1034CZT

ComplementaryPowerTrench?MOSFETN-channel:20V,3.8A,66m廓P-channel:-20V,-2.6A,142m廓

GeneralDescription ThisdeviceisdesignedspecificallyasasinglepackagesolutionforaDC/DC‘Switching’MOSFETincellularhandsetandotherultra-portableapplications.ItfeaturesanindependentN-Channel&P-ChannelMOSFETwithlowon-stateresistanceforminimumconductionlosses.T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDME1034CZT

MOSFET-Complementary,POWERTRENCH

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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NXP
1715+
SOP
251156
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NXP
2018+
SMD
5500
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NXP
22+
SOT115J
9000
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NXP
21+
SOT115J
13880
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NXP
23+
SOT115J
9000
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NXP/恩智浦
05+
SOT115
880000
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NXP
2024+
SOT115
188600
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NXP USA Inc.
21+
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53200
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NXP
22+
NA
45000
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2022+
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550
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