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CGHV60075D5中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書
CGHV60075D5規(guī)格書詳情
Description
Wolfspeed’s CGHV60075D5 is a gallium nitride (GaN)
High Electron Mobility Transistor (HEMT). GaN has
superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher
saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and
wider bandwidths compared to Si and GaAs transistors
Features
? 19 dB Typical Small Signal Gain at 4 GHz
? 17 dB Typical Small Signal Gain at 6 GHz
? 65 Typical Power Added Efficiency at 4 GHz
? 60 Typical Power Added Efficiency at 6 GHz
? 75 W Typical PSAT
? 50 V Operation
? High Breakdown Voltage
? Up to 6 GHz Operation
? Bare die are shipped in Gel-Pak? containers
? Non-adhesive tacky membrane immobilizes die during shipment
Applications
? 2-Way Private Radio
? Broadband Amplifiers
? Cellular Infrastructure
? Test Instrumentation
? Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CREE |
24+ |
SMD |
600 |
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口 |
詢價(jià) | ||
CREE |
24+ |
N/A |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) | ||
CREE |
22+ |
BGA |
10000 |
原裝正品優(yōu)勢現(xiàn)貨供應(yīng) |
詢價(jià) | ||
CREE |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | |||
CREE |
2023+ |
全新原裝 |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | ||
CREE |
638 |
原裝正品 |
詢價(jià) | ||||
CREE |
2308+ |
原廠原包 |
6850 |
十年專業(yè)專注 優(yōu)勢渠道商正品保證 |
詢價(jià) | ||
CREE/科銳 |
14+ |
die |
50 |
CREE優(yōu)勢訂貨-軍工器件供應(yīng)商 |
詢價(jià) | ||
Cree/Wolfspeed |
22+ |
Die |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
CREE(科銳) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價(jià) |
