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CEP07N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP07N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP07N65A

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEP07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,6A,RDS(ON)=1.45Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU07N65A

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU07N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU07N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU07N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET
21+
TO-220
100
原裝現(xiàn)貨假一賠十
 詢價(jià)
CET/華瑞
2022+
TO-220
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
C
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET
21+
TO-220
10
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
CET/華瑞
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
CET/華瑞
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
CET
24+
TO-220
56000
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持
 詢價(jià)
CET
23+
TO-220
10000
原裝正品現(xiàn)貨
 詢價(jià)
CET
24+
TO-220
18000
原裝正品 有掛有貨 假一賠十
 詢價(jià)
CET
20+
TO-220
50
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多CEP07N65A供應(yīng)商 更新時(shí)間2025-3-24 8:00:00

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