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首頁 >CEP02N6G>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEP02N6G	文件：398.08 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP02N6G	文件：599.54 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N6	文件：75.08 Kbytes Page：5 Pages	N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB02N6A	文件：592.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N6G	文件：599.54 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N6G	文件：398.08 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED02N6	文件：44.81 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●600V,1.9A,RDS(ON)=5?@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED02N6A	文件：123.74 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.3A,RDS(ON)=8?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED02N6A	文件：609.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N6G	文件：615.01 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N6G	文件：423.36 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEE02N6A	文件：461.29 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,1.3A,RDS(ON)=8.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEE02N6A	文件：721.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEE02N6G	文件：723.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEE02N6G	文件：462.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2.0A,RDS(ON)=5.0Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-126package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N6	文件：132.65 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N6	文件：45.44 Kbytes Page：5 Pages	N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N6A	文件：125.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET

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詳細(xì)參數(shù)

型號：
CEP02N6G
制造商：
CET
制造商全稱：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
齊創(chuàng)科技(上海,北京,青島)有限公司	CEP02N6G	SR	23+	TO-220	5000	原裝正品,假一罰十	詢價(jià)
深圳市納艾斯科技有限公司	CEP02N6G	CET	2020+	TO-220	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市航潤創(chuàng)能電子集團(tuán)有限公司	CEP02N6G	CET	21+	TO-220	60	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	CEP02N6G	CET/華瑞	23+	TO-220	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	CEP02N6G	VBSEMI/臺灣微碧	23+	TO220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	CEP02N6G	CET/華瑞	2022+	TO-220	32500	原廠代理終端免費(fèi)提供樣品	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	CEP02N6G	CET/華瑞	22+	TO220	9800	只做原裝正品假一賠十!正規(guī)渠道訂貨!	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	CEP02N6G	C	23+	TO-220	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳廊盛科技有限公司	CEP02N6G	CET/華瑞	22+	TO-220	50000	只做原裝正品,假一罰十,歡迎咨詢	詢價(jià)
深圳市威雅利發(fā)展有限公司	CEP02N6G	VBsemi	21+	TO220	10065	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)

更多CEP02N6G供應(yīng)商更新時(shí)間2024-12-24 15:36:00

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