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DS2152LN

EnhancedT1Single-ChipTransceiver

DESCRIPTION TheDS2152T1EnhancedSingle-ChipTransceivercontainsallofthenecessaryfunctionsforconnectiontoT1lines,whethertheybeDS-1longhaulorDSX-1shorthaul.TheclockrecoverycircuitryautomaticallyadjuststoT1linesfrom0feettoover6000feetinlength.Thedevicecan

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS2152LN

EnhancedT1Single-ChipTransceiver

MaximMaxim Integrated Products

美信美信半導(dǎo)體

DS2152LN+

EnhancedT1Single-ChipTransceiver

MaximMaxim Integrated Products

美信美信半導(dǎo)體

DSE2152

ANALOGUEOUTPUTEXPANSIONMODULE

KEYFEATURES ?Analogueoutputexpansion moduleforsupportedDSENet controllers ?6outputsconfigurableas 4to20mA(0to20mA)and0to 10VDC ?PowerOn/LinkLostLED ?Amaximumof4modulescan beconnectedto1hostcontrol moduletoprovideupto24 additionalconfigurableout

DSEDeep Sea Electronics

深海DSE英國(guó)深海電子有限公司

ECQB2152MF

PlasticFilmCapacitors

PanasonicPanasonic Semiconductor

松下松下電器

ENA2152

Lithium-ionbatterycharginganddischargingswitch

N-ChannelSiliconMOSFETLithium-ionbatterycharginganddischargingswitch Features ?2.5Vdrive ?Common-draintype ?2KVESDHBM ?Protectiondiodein ?Halogenfreecompliance

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

EPC2152

80V,15AePower??StagePRELIMINARY

EPC-COEfficient Power Conversion Corporation.

高效變流技術(shù)高效變流技術(shù)公司

FMKS-2152

SiliconDiode

Description TheFMKSSeriesisthefastrecoverydiodebuilt-intemperaturedetection. AfastrecoverydiodeandaSchottkybarrierdiodefortemperaturedetectionareformedonthesamedie.Thus,theFMKSSeriesachieveshighlyaccuratetemperaturedetectionthatishigherthanthatwithathe

SankenSanken electric

三墾三墾電氣株式會(huì)社

HWS2152

GaAsDC-2.0GHzSPDTSwitch

Description TheHWS2152isanintegratedGaAsSPDTSwitchdesignedfortransceiversoperatingin1MHzto2500MHzfrequencyrange.Itissuitablefor900MHzcellularphones,CT1,CT2,DECT,andWirelessLANapplications. Features ?FrequencyRange:DC-2.0GHz ?ReflectiveType ?LowPowe

HWHexawave, Inc

漢威光電漢威光電股份有限公司

IR2152

SELF-OSCILLATINGHALF-BRIDGEDRIVER

Description TheIR2152isahighvoltage,highspeed,selfoscillatingpowerMOSFETandIGBTdriverwithboth highandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.Thefrontendfeaturesaprogrammableosci

IRF

International Rectifier

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23+
SO-8
360000
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CET
24+
5000
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CET
1742+
SOP-8
98215
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CET
23+
SOP-8
39000
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CET
2020+
SO-8
9500
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CET
2020+
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80000
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24+
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35200
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2447
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105000
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8938
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CET/華瑞
23+
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50000
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更多CEM2152供應(yīng)商 更新時(shí)間2025-3-28 8:30:00

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