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CED655

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■150V,6.4A,RDS(ON)=0.45Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED655

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,6.4A,RDS(ON)=0.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF655N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEI655N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP655N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU655

N-Channel200V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CEU655

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■150V,6.4A,RDS(ON)=0.45Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU655

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

CEU655

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 150V,6.4A,RDS(ON)=0.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CM655

WedgeBase

VCC

Visual Communications Company

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
2022+
TO-251
50000
原廠代理 終端免費提供樣品
 詢價
-
23+
NA
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
C
23+
TO-252
6000
原裝正品，支持實單
 詢價
CET/華瑞
2022+
TO-251
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
SR
23+
TO-251
6000
原裝正品,假一罰十
 詢價
CET
24+
TO-251
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
日本NEC
23+
TO-251
69820
終端可以免費供樣,支持BOM配單!
 詢價
CET/華瑞
20+
TO-251
440
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
CET
25+
TO-251
440
原裝正品,假一罰十!
 詢價
CET
25+
TO-251
440
原裝正品,假一罰十!
 詢價
更多CED655供應商 更新時間2025-3-18 14:01:00

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