零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,2.5A,RDS(ON)=280mW@VGS=10V. RDS(ON)=330mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ?60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ?HighdensecelldesignforlowRDS(ON) ?Ruggedandreliable. ?SOT-89Package | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ?60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ?HighdensecelldesignforlowRDS(ON) ?Ruggedandreliable. ?SOT-89Package | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,5A,RDS(ON)=32m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel 6 0-V (D-S) MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,5.7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,1.8A,RDS(ON)=250mΩ@VGS=10V. RDS(ON)=330mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,5.2A,RDS(ON)=46mW@VGS=10V. RDS(ON)=52mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel 0-V (D-S) MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET APPLICATIONS ?LoadSwitchesforPortableDevices | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
23+ |
SOT-89 |
1000 |
交期準(zhǔn)時(shí)服務(wù)周到 |
詢價(jià) | ||
KYOCERA/京瓷 |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
KYOCERA |
24+ |
SMD |
598000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
KYOCERA/京瓷 |
2022 |
SMD |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
AVNET |
23+ |
SMD |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
KYOCERA/京瓷 |
23+ |
NA/ |
553 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
CET |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
VBsemi(臺(tái)灣微碧) |
2112+ |
SOT89-3 |
105000 |
1000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨, |
詢價(jià) | ||
VBSEMI臺(tái)灣微碧 |
23+ |
SOT89-3 |
22820 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
VBsemi |
21+ |
SOT89-3L |
10065 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
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