首頁 >CD3301BRHHR>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-7.0A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-7.0A,RDS(ON)=32mW@VGS=-10V. RDS(ON)=50mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT7.0Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT28Ampere FEATURE *Smallflatpackage.(TO-252A) *SuperhighdensitycelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO |
詳細(xì)參數(shù)
- 型號:
CD3301BRHHR
- 制造商:
Texas Instruments
- 功能描述:
CONTROL LOGIC POWER SELECTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI/德州儀器 |
24+ |
QFN36 |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 | ||
Texas Instruments |
24+ |
VQFN-36 |
18898 |
TI優(yōu)勢主營型號-原裝正品 |
詢價 | ||
TI/德州儀器 |
22+ |
QFN |
21000 |
原廠原包裝。假一罰十??砷_13%增值稅發(fā)票。 |
詢價 | ||
TI/德州儀器 |
24+ |
QFN |
22500 |
全新原裝現(xiàn)貨 |
詢價 | ||
TI |
2016+ |
QFN36 |
5562 |
只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十! |
詢價 | ||
TEXAS |
2016+ |
QFN |
2000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
TI |
23+ |
QFN |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
TI |
22+23+ |
QFN36 |
37753 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
TI |
21+ |
QFN |
12588 |
原裝正品 |
詢價 | ||
TI |
2020+ |
QFN |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 |
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