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C2331

Silicon Power Transistors

DESCRIPTION ?WithTO-220package ?Complementtotype2SA1008 ?Lowcollectorsaturationvoltage ?Fastswitchingspeed APPLICATIONS ?Switchingregulators ?DC/DCconverters ?Highfrequencypoweramplifiers

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

C2331Y

NPN LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING)

LOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING ?ComplementtoKSA931 ?HighCollector-BaseVoltageVcso=80V ?CollectorCurrentIc=700mA ?CollectorDisslpationPc=1W

SamsungSamsung semiconductor

三星三星半導(dǎo)體

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. RDS(ON)=78mW@VGS=-1.8V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2331A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-5.5A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-4.2A,RDS(ON)=48mΩ@VGS=-4.5V. RDS(ON)=60mΩ@VGS=-2.5V. RDS(ON)=78mΩ@VGS=-1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2331

P-Channel30V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CES2331

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.2A,RDS(ON)=48mW@VGS=-4.5V. RDS(ON)=60mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired. RDS(ON)=78mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2331A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-4.3A,RDS(ON)=42mW@VGS=-4.5V. RDS(ON)=55mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=75mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM2331PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT4.2Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    C2331

  • 制造商：

    ELO Touch Solutions

  • 功能描述：

    ET1529L-7CWA-1-BG

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
A
24+
b
4
詢(xún)價(jià)
FAIRCHILD/仙童
22+
TO-220
6000
十年配單,只做原裝
 詢(xún)價(jià)
24+
TO220
500000
行業(yè)低價(jià),代理渠道
 詢(xún)價(jià)
FAIRCHILD/仙童
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
FAIRCHILD/仙童
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
FAIRCHILD
25+
TO-TO-220
12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
仙童
24+
TO-220
5800
只做原裝正品現(xiàn)貨 歡迎來(lái)電查詢(xún)15919825718
 詢(xún)價(jià)
PHI
2015+
DIP20
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
 詢(xún)價(jià)
PHI
DIP20
87+
71
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢(xún)價(jià)
PHI
17+
DIP20
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢(xún)價(jià)
更多C2331供應(yīng)商 更新時(shí)間2025-4-17 16:30:00

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