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C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3004NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000MHz,15dB18dBmInGaPHBTGPA TheMMG3009NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0--6000MHz,20dB20.5dBmInGaPHBT TheMMG3013NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreque

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000MHz,15dB15dBmInGaPHBTGPA TheMMG3011NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

400--2400MHz,17.5dB33dBmInGaPHBTGPA TheMMG3006NT1isageneralpurposeamplifierthatisinternallyinputprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom400to2400M

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3005NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor (InGaP HBT)

0-6000MHz,15dB17dBmInGaPHBT TheMMG3010NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6000MH

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000MHz,19dB16dBmInGaPHBTGPA TheMMG3007NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0-6000MHz,19dB18.5dBmInGaPHBTGPA TheMMG3012NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreq

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000MHz,18.5dB15dBmInGaPHBTGPA TheMMG3008NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Gallium Arsenide CATV Integrated Amplifier Module

Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3003NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputprematched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurpose

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0--6000MHz,15.5dB20.5dBmInGaPHBTGPA TheMMG3015NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0t

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

InGaP HBT Linear Amplifier

1Generaldescription TheMMZ25333Bisaversatile3?stagepoweramplifiertargetedatdriverandpre?driverapplicationsformacroandmicrobase stationsandfinal?stageapplicationsforsmallcells.Itsversatiledesignallowsoperationinanyfrequencybandfrom1500to 2700MHzprovidingg

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

CERAMIC CHIP/STANDARD

KEMETKEMET Corporation

基美基美公司

C0603C103J5RAC

RF Power Field Effect Transistors

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC7411

SMD Comm X7R, Ceramic, 0.01 uF, 5, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Class II, 0603

KEMETKEMET Corporation

基美基美公司

C0603C103J5RACAUTO

SMD Auto X7R, Ceramic, 0.01 uF, 5, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Automotive Grade, 0603

KEMETKEMET Corporation

基美基美公司

詳細(xì)參數(shù)

  • 型號(hào):

    C0603C103J5RAC

  • 功能描述:

    多層陶瓷電容器MLCC - SMD/SMT 50volts 0.01uF 5% X7R

  • RoHS:

  • 制造商:

    American Technical Ceramics(ATC)

  • 電容:

    10 pF

  • 容差:

    1 %

  • 電壓額定值:

    250 V

  • 溫度系數(shù)/代碼:

    C0G(NP0) 外殼代碼 -

  • in:

    0505 外殼代碼 -

  • mm:

    1414

  • 工作溫度范圍:

    - 55 C to + 125 C

  • 產(chǎn)品:

    Low ESR MLCCs

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
KEMET(基美)
23+
SMD
41791
免費(fèi)送樣,賬期支持,原廠直供,沒(méi)有中間商賺差價(jià)
詢價(jià)
KEM
24+
16000
詢價(jià)
KEMET
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
KEMET
三年內(nèi)
1983
只做原裝正品
詢價(jià)
Kemet
21+
上海當(dāng)天發(fā)貨
5340
原裝現(xiàn)貨假一賠十
詢價(jià)
KEMET(基美)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
NA
NA
NA
2885
原裝/現(xiàn)貨
詢價(jià)
KEMET/基美
23+
0603
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
KEMET/基美
2022
0603
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
KEM
23+
原廠封裝
5177
現(xiàn)貨
詢價(jià)
更多C0603C103J5RAC供應(yīng)商 更新時(shí)間2024-12-24 15:08:00