BULT118D中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

■ NPN TRANSISTOR

■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

APPLICATIONS:

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS