Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.

Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Electronic ballast for fluorescent lighting

■ Switch mode power supplies.

BULD741屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個。意法半導(dǎo)體（ST）集團制造生產(chǎn)的BULD741晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應(yīng)用中用于構(gòu)建模擬信號放大功能。作為大批量生產(chǎn)的第一批半導(dǎo)體器件之一，對于涉及高頻開關(guān)和在大電流或高電壓下工作的應(yīng)用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構(gòu)建模擬信號的應(yīng)用而言，它們?nèi)匀皇鞘走x技術(shù)。