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BUK9508-55A

TrenchMOS logic level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology,featuringverylowon-stateresistance. Features ■TrenchMOS?technology ■Q101compliant ■175°Crated ■Logiclevelcompatible. Applications ■Automotiveandgeneralpu

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BUK9508-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BUK9508-55A

TrenchMOS? logic level FET

1.Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusing TrenchMOS?technology,featuringverylowon-stateresistance. 2.Features nTrenchMOS?technology nQ101compliant n175°Crated nLogiclevelcompatible. 3.Applications nAutomotiveand

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BUK9508-55

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgenera

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BUK9508-55B

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BUK9508-55B

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■Lowconduct

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號:

    BUK9508-55A

  • 功能描述:

    MOSFET RAIL PWR-MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多BUK9508-55A供應商 更新時間2025-3-27 16:30:00