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BSS138W

Advanced MOSFET process technology

Description: Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawidev

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

BSS138W

N-Channel Enhancement Mode Field Effect Transistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?HighdensecelldesignforextremelylowRDS(ON) ?Ruggedandreliable ?Leadfreeproductisacquired ?SOT-323Package ?MarkingCode:SS ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BSS138W

POWER MOSFET N-CHANNEL 200mA, 50V

DESCRIPTION Typicalapplicationsaredc dcconverters,power managementinportableandbatterypowered productssuchascomputers,printers,PCMCIA cards,cellularandcordlesstelephones. The BSS138WisavailableinSC70PackageType FEATURES ?LowThresholdVoltage(VGS(th)th):0

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

BSS138W

Nch 60V 310mA Small Signal MOSFET

Features 1)Veryfastswitching 2)Ultralowvoltagedrive(2.5Vdrive) 3)ESDprotectionupto2kV(HBM) 4)Pb-freeleadplating;RoHScompliant. 5)HalogenFree. Application Switchingcircuits Low-sideloadswitch Relaydriver

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BSS138W

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138W

N-Channel Enhancement Mode MOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

BSS138W

N-Channel POW

Description: Typicalapplicationsaredc–dcconverters, powermanagementinportableandbattery–powered productssuchascomputers,printers,PCMCIAcards, cellularandcordlesstelephones. Features: SimpleDriveRequirement SmallPackageOutline

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS138W

N-Channel 50-V(D-S) MOSFET

FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays

RECTRON

Rectron Semiconductor

BSS138W

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHighReliability

DIODES

Diodes Incorporated

BSS138W

SIPMOS Small-Signal-Transistor

Features ?N-channel ?Enhancementmode ?Logiclevel ?dv/dtrated ?Pb-freelead-plating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS138W

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LeadFree/RoHSCompliant(Note4) ?GreenDevice(Note5and6)

DIODES

Diodes Incorporated

BSS138W

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-Channelenhancementmodefieldeffecttransistor.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurrentapplicationssuchassm

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS138W

SIPMOS Small-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS138W

N-Channel POWER MOSFET

WEITRON

Weitron Technology

BSS138W

SIPMOS Small-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS138W

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

BSS138W_2

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LeadFree/RoHSCompliant(Note4) ?GreenDevice(Note5and6)

DIODES

Diodes Incorporated

BSS138W-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHighReliability

DIODES

Diodes Incorporated

BSS138W-7-F

N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:2Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective20

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

BSS138WAHZG

Nch 60V 310mA Small Signal MOSFET

Features 1)Veryfastswitching 2)Ultralowvoltagedrive(2.5Vdrive) 3)ESDprotectionupto2kV(HBM) 4)Pb-freeleadplating;RoHScompliant. 5)HalogenFree. 6)AEC-Q101Qualified. Application Switchingcircuits Low-sideloadswitch Relaydriver

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    BSS138W

  • 功能描述：

    MOSFET 50V N-CH Logic Level

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILDONSEMICONDUCTOR
24+
NA
240000
原裝現(xiàn)貨 假一賠十
 詢價(jià)
INFINEON/英飛凌
24+
SOT-323
45000
熱賣優(yōu)勢現(xiàn)貨
 詢價(jià)
FAIRCHILDONSEMICONDUCTOR
21+
NA
120000
只做原裝,假一罰十
 詢價(jià)
INFINEON/英飛凌
24+
SOT-323
350
只做原廠渠道 可追溯貨源
 詢價(jià)
INFINEON
23+
20000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價(jià)
ON(安森美)
2023+
N/A
4550
全新原裝正品
 詢價(jià)
ON/安森美
23+
SOT323
19048
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同
 詢價(jià)
ON/安森美
23+
SOT323
23316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
INFINEON/英飛凌
24+
SOT323
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
 詢價(jià)
ROHM/羅姆
24+
DFN5060-8L
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
 詢價(jià)
更多BSS138W供應(yīng)商 更新時(shí)間2024-12-23 15:24:00

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