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BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6)

DIODES

Diodes Incorporated

BSS138DW

Dual N-Channel 60 V (D-S) MOSFET

?LowOn-Resistance:1.5 FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

Dual N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowOn-Resistance:2.5Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

Dual N-Channel MOSFET

Feature ?HighdensitycelldesignforextremelylowRDS(on) ?RuggedandRelaible Application ?DirectLogic-LevelInterface:TTL/CMOS ?BatteryOperatedSystems ?Solid-StateRelays

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast

DIODES

Diodes Incorporated

BSS138DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

BSS138DW_09

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6)

DIODES

Diodes Incorporated

BSS138DW_V01

Dual N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowOn-Resistance:2.5Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW-7-F

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6)

DIODES

Diodes Incorporated

BSS138DWK

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODES

Diodes Incorporated

BSS138DWK-13

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODES

Diodes Incorporated

BSS138DWK-7

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODES

Diodes Incorporated

BSS138DWQ

Low On-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchin

DIODES

Diodes Incorporated

BSS138DWQ-13

Low On-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchin

DIODES

Diodes Incorporated

BSS138DWQ-7

Low On-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchin

DIODES

Diodes Incorporated

BSS138DW_1

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

BSS138DW_15

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

BSS138DW-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

BSS138DW-7-F

Dual N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細(xì)參數(shù)

  • 型號：

    BSS138DW

  • 制造商：

    DIODES

  • 制造商全稱：

    Diodes Incorporated

  • 功能描述：

    DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
DIODES/美臺
24+
SOT363
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
 詢價
DIODES
24+
SOT-363SOT-323-6
6300
新進(jìn)庫存/原裝
 詢價
DIODES
23+
SOT-363
7750
全新原裝優(yōu)勢
 詢價
DIODES/美臺
22+
SOT363
90000
正規(guī)代理渠道假一賠十
 詢價
DIODES/美臺
24+
SOT363
98000
原裝現(xiàn)貨假一罰十
 詢價
VBsemi(臺灣微碧)
2112+
SC70-6
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Bychip/百域芯
21+
SOT-363
30000
優(yōu)勢供應(yīng) 品質(zhì)保障 可開13點發(fā)票
 詢價
DIODES
21+
SOT-363
170
原裝現(xiàn)貨假一賠十
 詢價
DIODES/美臺
23+
SOT363
12000
原裝正品假一罰百!可開增票!
 詢價
MSV/萌盛微
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多BSS138DW供應(yīng)商 更新時間2024-11-19 16:10:00

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