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BSS123-G

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BSS123I

OptiMOSTMSmall-Signal-Transistor,100V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123K

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

BSS123K

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications

DIODES

Diodes Incorporated

BSS123K

NCEN-ChannelEnhancementModePowerMOSFET

GeneralFeatures ●VDS=100V,ID=0.17A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

BSS123L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BSS123L

MOSFETN-CHANNELPOWERMOSFET

DESCRIPTION TheBSS123L isavailableinSOT23package FEATURES ?AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

BSS123N

OptiMOS??Small-Signal-Transistor

Features ?N-channel ?Enhancementmode ?Logiclevel(4.5Vrated) ?Avalancherated ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123Q

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInp

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BSS123W

SOT-323Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

N-ChannelEnhancementModeMOSFET

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BSS123W

N-ChannelMOSFET

FEATURE ?SurfaceMountPackage ?HighDensityCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?RuggedandReliable APPLICATION ?SmallServoMotorControls ?PowerMOSFETGateDrivers ?SwitchingApplication

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS123WQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpe

DIODES

Diodes Incorporated

BUL123S

SiliconNPNtransistorinaTO-92PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

BYD123

Ultrafastlow-lossrectifier

DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec?technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CD123D-B

CD123D-B1xRSchottkyBarrierChipDiodeSeries

Features ■RoHScompliant* ■Leadlesschipform ■Highcurrentcapability ■Lowforwardvoltage ■Halogenfree** Applications ■SwitchModePowerSupplies(SMPS) ■Portableequipmentbatteries ■Highfrequencyrectification ■DC/DCconverters ■Telecommunications

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

詳細參數(shù)

  • 型號：

    BSS123ATC

  • 功能描述：

    MOSFET N-Chnl 100V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Diodes
22+
TO2363 SC59 SOT233
9000
原廠渠道,現(xiàn)貨配單
 詢價
Diodes
21+
TO2363 SC59 SOT233
13880
公司只售原裝,支持實單
 詢價
Diodes Incorporated
2022+
TO-236-3,SC-59,SOT-23-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
DIODES/美臺
22+
SOT-23-3
25000
只有原裝絕對原裝,支持BOM配單!
 詢價
DIODES/美臺
22+
SOT-23-3
25000
只有原裝原裝,支持BOM配單
 詢價
PANJIT
23+
Reel
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
PANJIT
2022
Reel
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
PANJIT
22+
Reel
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
PANJIT
22+
Reel
100000
代理渠道/只做原裝/可含稅
 詢價
PANJIT
23+
NA/
316
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
更多BSS123ATC供應商 更新時間2024-11-19 15:26:00

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