首頁(yè) >BSM50GB120DN2>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
BSM50GB120DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) ?Half-bridge ?Includingfastfree-wheelingdiodes ?Packagewithinsulatedmetalbaseplate | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | |
BSM50GB120DN2 | IGBT Power Module ?Half-bridge ?Includingfastfree-wheelingdiodes ?Packagewithinsulatedmetalbaseplate | eupec eupec GmbH | eupec | |
BSM50GB120DN2 | IGBT Power Module ?Half-bridge ?Includingfastfree-wheelingdiodes ?Packagewithinsulatedmetalbaseplate | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Package:模塊;包裝:托盤 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - IGBT - 模塊 描述:IGBT MOD 1200V 78A 400W | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
BSM50GB120DN2
- 功能描述:
IGBT 模塊 1200V 50A DUAL
- RoHS:
否
- 制造商:
Infineon Technologies
- 產(chǎn)品:
IGBT Silicon Modules
- 配置:
Dual 集電極—發(fā)射極最大電壓
- VCEO:
600 V
- 集電極—射極飽和電壓:
1.95 V 在25
- C的連續(xù)集電極電流:
230 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
445 W
- 最大工作溫度:
+ 125 C
- 封裝/箱體:
34MM
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
標(biāo)準(zhǔn)封裝 |
17048 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。 |
詢價(jià) | ||
EUPEC |
08+ |
IGBT |
77 |
絕對(duì)全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn) |
詢價(jià) | ||
IGBT |
23+ |
模塊 |
26 |
詢價(jià) | |||
INFINEON/英飛凌 |
module |
1525 |
專營(yíng)功率模塊,現(xiàn)貨庫(kù)存 |
詢價(jià) | |||
德國(guó)英飛凌Infineon |
2020+ |
原廠原裝正品 |
8000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
德國(guó)英飛凌Infineon |
2021+ |
原廠原封裝 |
93628 |
原裝進(jìn)口現(xiàn)貨 假一罰百 |
詢價(jià) | ||
德國(guó)英飛凌Infineon |
21+ |
10560 |
十年專營(yíng),原裝現(xiàn)貨,假一賠十 |
詢價(jià) | |||
infineon |
24+ |
IGBTMODULE |
3150 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)! |
詢價(jià) | ||
INFINEON |
23+ |
IGBT |
200 |
原包裝原標(biāo)簽特價(jià)銷售 |
詢價(jià) | ||
EUPEC/歐派克 |
19+ |
IGBT |
1290 |
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126 |
詢價(jià) |
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